Informasi Umum

Kode

24.21.281

Klasifikasi

621.39 - Computer engineering, Electronic digital computers, Central processing units, Computer reliability, General Computer Performance Evaluation

Jenis

Buku - Elektronik (E-Book)

Subjek

Circuits And Systems

No. Rak

Tel-U Bandung - Gedung Manterawu Lantai 5 : Rak 13b
Tel-U Purwokerto : Rak 6

Dilihat

160 kali

Informasi Lainnya

Abstraksi

This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications.

Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-selective cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM Beyond Storage.

The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.

Koleksi & Sirkulasi

Tersedia 1 dari total 1 Koleksi

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Pengarang

Nama Qing Luo
Jenis Perorangan
Penyunting
Penerjemah

Penerbit

Nama CRC Press
Kota Boca Raton
Tahun 2023

Sirkulasi

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Denda harian IDR 0,00
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