SiC Power Module Design: Performance, Robustness and Reliability
Alberto Castellazzi, Andrea Irace
Informasi Umum
Kode
23.21.278
Klasifikasi
629.892 - Robots
Jenis
Buku - Elektronik (E-Book)
Subjek
Robots
No. Rak
Dilihat
173 kali
Informasi Lainnya
Abstraksi
High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging. This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs. Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.
Koleksi & Sirkulasi
Tersedia 1 dari total 1 Koleksi
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Pengarang
| Nama | Alberto Castellazzi, Andrea Irace |
| Jenis | Perorangan |
| Penyunting | |
| Penerjemah |
Penerbit
| Nama | IET |
| Kota | New York |
| Tahun | 2021 |
Sirkulasi
| Harga sewa | IDR 0,00 |
| Denda harian | IDR 0,00 |
| Jenis | Non-Sirkulasi |
